SUD45P03-09
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
- 1.0
I
S
- Source Current (A)
- 1.3
10
T
J
= 150 °C
V
GS(th)
(V)
I
D
= 250
µA
- 1.6
T
J
= 25 °C
1
- 1.9
0.1
0.0
0.3
0.6
0.9
1.2
- 2.2
- 50
- 25
0
25
50
75
100
125
150
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
4000
- 33
Threshold Voltage
3000
C - Capacitance (pF)
C
iss
V
DS
- Drain-to-Source
Voltage
(V)
I
D
= 250
µA
- 34
2000
- 35
1000
C
rss
0
0
5
C
oss
- 36
10
15
20
25
30
- 37
- 50
- 25
0
25
50
75
100
125
150
V
DS
- Drain-to-Source
Voltage
(V)
T
J
- Junction Temperature (°C)
Capacitance
1.8
I
D
= 20 A
V
GS
= 10
V
R
DS(on)
- On-Resistance
I
D
- Drain Current (A)
1.5
(Normalized)
Drain Source Breakdown vs. Junction Temperature
60
45
Package Limited
1.2
V
GS
= 4.5
V
30
0.9
15
0.6
- 50
0
- 25
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
4/8
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