SUD40N10-25
N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
V
GS
= 10
V
I
D
= 40 A
I
S
- Source Current (A)
100
2.5
R
DS(on)
- On-Resistance
2.0
(Normalized)
T
J
= 175 °C
10
1.5
1.0
T
J
= 25 °C
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Junction Temperature ( °C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
Limited
by
R
DS(on)
*
10
µs
100
µs
I
D
- Drain Current (A)
10
1 ms
THERMAL RATINGS
50
40
I
D
- Drain Current (A)
30
20
10 ms
1
T
C
= 25 °C
Single Pulse
100 ms
1 s, DC
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
0.1
0.1
Maximum Avalanche Drain Current
vs. Case Temperature
2
1
Normalized Effective Transient
Thermal Impedance
1
10
1000
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
4/7
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