SUD40N06-25L
N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 20 A
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
2.0
I
S
– Source Current (A)
T
J
= 150_C
T
J
= 25_C
10
100
Source-Drain Diode Forward Voltage
1.5
1.0
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Drain Current vs. Case Temperature
50
200
100
40
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Limited
by r
DS(on)
100
ms
1 ms
Safe Operating Area
30
10
20
10 ms
1
T
C
= 25_C
Single Pulse
100 ms
dc, 1 s
10
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
Square Wave Pulse Duration (sec)
10
–1
1
3
4/5
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