SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.08
I
D
= 12 A
r
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.06
T
A
= 125 °C
0.04
T
A
= 25 °C
T
J
= 150 °C
10
T
J
= 25 °C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
4.5
200
r
DS(on)
vs. V
GS
vs. Temperature
4.0
I
D
= 250
µA
150
Power (W)
3.5
V
GS(th)
(V)
3.0
100
2.5
50
2.0
1.5
- 50
- 25
0
25
50
75
100
125
150
175
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
r
DS(on)
*
Single Pulse Power, Junction-to-Ambient
100
µs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
BVDSS
Limited
10 s
DC
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
r
DS(on)
is specified
Safe Operating Area
4/9
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