SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 150 V, V
GS
= 0 V
V
DS
= 150 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 150 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 5 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 5 A, T
J
= 175 °C
V
GS
= 6 V, I
D
= 5 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
c
Symbol
Test Conditions
Min.
150
2
Typ.
a
Max.
Unit
4
± 100
1
50
250
V
nA
µA
A
50
0.042
0.052
0.109
0.145
0.047
40
0.060
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
V
DS
= 15 V, I
D
= 25 A
S
1725
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
216
100
33
V
DS
= 75 V, V
GS
= 10 V, I
D
= 25 A
1
15
V
DD
= 50 V, R
L
= 3
Ω
I
D
≅
25 A, V
GEN
= 10 V, R
g
= 2.5
Ω
70
25
60
9
12
3
25
100
40
90
50
I
F
= 25 A, V
GS
= 0 V
I
F
= 25 A, dI/dt = 100 A/µs
0.9
95
1.5
140
A
V
ns
ns
Ω
40
nC
pF
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2/7
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