SUD25N06-45L
N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10V
V
GS
= 10 V, I
D
= 12 A
D i S
O S
R i
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 12 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 12 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 12 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 12 A
15
20
0.025
0.045
0.058
0.036
25
0.035
0.063
0.081
0.045
S
W
60
1.0
3.0
"100
1
50
150
A
mA
A
nA
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 1 2
W
V,
1.2
I
D
^
25 A V
GEN
= 10 V R
G
= 7 5
W
A,
V,
7.5
V
DS
= 30 V V
GS
= 10 V I
D
= 25 A
V,
V,
V
GS
= 0 V, V
DS
= 25 V f = 1 MH
V
V,
MHz
1320
210
56
26
7.5
4.5
10
10
31
10
20
20
ns
45
20
40
nC
C
pF
F
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
a
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SM
V
SD
t
rr
Q
rr
I
F
= 25 A, V
GS
= 0 V
60
I
F
= 25 A, di/dt = 100 A/ms
0.13
30
1.5
90
A
V
ns
mC
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
2/5
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