SQD50P03-07
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 5 V
80
V
GS
= 4 V
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
80
60
40
40
T
C
= 25 °C
20
V
GS
= 2 V
0
0
4
8
V
GS
= 3 V
20
T
C
= 125 °C
0
T
C
= - 55 °C
0
2
4
6
8
10
12
16
20
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
10
120
Transfer Characteristics
g
fs
- Transconductance (S)
8
I
D
- Drain Current (A)
100
T
C
= - 55 °C
80
6
T
C
= 25 °C
60
T
C
= 25 °C
4
40
T
C
= 125 °C
20
2
T
C
= 125 °C
0
0
1
2
3
T
C
= - 55 °C
4
5
0
0
10
20
30
40
50
V
GS
-
Gate-to-Source
Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
0.025
4000
Transconductance
R
DS(on)
- On-Resistance (Ω)
0.020
3000
C - Capacitance (pF)
C
iss
0.015
V
GS
= 4.5 V
0.010
V
GS
= 10 V
0.005
2000
1000
C
oss
C
rss
0
10
20
30
40
50
60
0
0
20
40
60
80
100
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
3/9
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