SQD50N05-11L
Automotive N-Channel
50 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.3
I
D
= 20 A
2.0
V
GS
= 10 V
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
100
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
1.7
(Normalized)
1.4
1.1
0.8
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.10
0.5
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.08
V
GS(th)
Variance (V)
0.1
0.06
- 0.3
I
D
= 5 mA
- 0.7
I
D
= 250 μA
0.04
T
J
= 150 °C
0.02
T
J
= 25 °C
0
2
4
6
8
10
- 1.1
0
- 1.5
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
-
Gate-to-Source
Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
65
I
D
= 1 mA
V
DS
- Drain-to-Source
Voltage
(V)
62
Threshold Voltage
59
56
53
50
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
4/9
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
