SQD50N04-5m6
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.1
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
1.8
V
GS
= 10 V
1.5
I
S
-
Source
Current (A)
10
T
J
= 150
°C
1
100
1.2
0.1
T
J
= 25
°C
0.9
0.01
0.6
- 50 - 25
0.001
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.05
0.5
Source Drain Diode Forward Voltage
0.04
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.1
0.03
- 0.3
I
D
= 5 mA
- 0.7
I
D
= 250 μA
- 1.1
0.02
0.01
T
J
= 25
°C
0.00
0
2
T
J
= 150
°C
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
- 1.5
- 50 - 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
60
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
56
Threshold Voltage
52
48
44
40
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
4/7
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