SQD40N10-25
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
I
D
= 40 A
V
GS
-
Gate-to-Source
Voltage (V)
2.5
I
D
= 40 A
2.1
R
DS(on)
- On-Resistance
8
V
DS
= 50 V
6
V
GS
= 10 V
(Normalized)
1.7
4
1.3
2
0.9
0
0
10
20
30
40
50
0.5
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total
Gate
Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.20
On-Resistance vs. Junction Temperature
T
J
= 150 °C
1
T
J
= 25 °C
0.1
R
DS(on)
- On-Resistance (Ω)
10
I
S
-
Source
Current (A)
0.16
0.12
0.08
T
J
= 150 °C
0.04
T
J
= 25 °C
0
2
4
6
8
10
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
130
On-Resistance vs. Gate-to-Source Voltage
I
D
= 10 mA
0.1
V
GS(th)
Variance (V)
V
DS
- Drain-to-Source
Voltage
(V)
124
- 0.3
I
D
= 5 mA
- 0.7
I
D
= 250 μA
- 1.1
118
112
106
- 1.5
- 50
- 25
0
25
50
75
100
125
150
175
100
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4/9
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