SQD40N06-14L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.3
R
DS(on)
- On-Resistance (Normalized)
100
I
D
= 20 A
2.0
V
GS
= 10 V
I
S
-
Source
Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
1.7
1.4
1.1
0.8
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
T
J
- Junction Temperature (°C)
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.10
0.5
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.08
V
GS(th)
Variance (V)
0.1
0.06
- 0.3
I
D
= 5 mA
- 0.7
I
D
= 250 μA
- 1.1
0.04
T
J
= 150 °C
0.02
T
J
= 25 °C
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
0
- 1.5
- 50
- 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
75
I
D
= 10 mA
V
DS
- Drain-to-Source
Voltage
(V)
72
Threshold Voltage
69
66
63
60
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
4/9
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