SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1500
6
I
D
= 35 A
V
GS
-
Gate-to-Source
Voltage (V)
1200
C - Capacitance (pF)
C
iss
900
5
V
DS
= 25 V
4
3
600
C
oss
300
C
rss
0
0
5
10
15
20
25
30
35
40
45
50
55
V
DS
- Drain-to-Source Voltage (V)
2
1
0
0
3
6
9
12
Q
g
- Total
Gate
Charge (nC)
15
Capacitance
0.20
Gate Charge
0.6
R
DS(on)
- On-Resistance (Ω)
0.16
0.3
V
GS(th)
Variance
(V)
0
0.12
- 0.3
I
D
= 5 mA
- 0.6
I
D
= 250 µA
- 0.9
0.08
0.04
T
J
= 150 °C
0.00
0
2
4
T
J
= 25 °C
6
8
10
- 1.2
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
70
I
D
= 1 mA
V
DS
- Drain-to-Source
Voltage
(V)
Threshold Voltage
67
64
61
58
55
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
4/9
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