SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
I
D
= 15 A
2.1
R
DS(on)
- On-Resistance
I
S
-
Source
Current (A)
100
10
V
GS
= 10 V
T
J
= 150 °C
1
T
J
= 25 °C
0.1
(Normalized)
1.7
1.3
0.9
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.25
0.6
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.20
V
GS(th)
Variance (V)
0.3
0
0.15
- 0.3
I
D
= 5 mA
- 0.6
I
D
= 250 μA
0.10
T
J
= 150 °C
0.05
T
J
= 25 °C
0
2
4
6
8
10
- 0.9
0
- 1.2
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
-
Gate-to-Source
Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
80
I
D
= 1 mA
V
DS
- Drain-to-Source
Voltage
(V)
76
Threshold Voltage
72
68
64
60
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
4/9
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