SQD19P06-60L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 10
V
thru 5
V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
30
24
18
18
12
V
GS
= 4
V
12
6
6
V
GS
= 2
V,
1
V
V
GS
= 3
V
T
C
= 25 °C
T
C
= 125 °C
0
0
3
6
9
12
15
0
0
2
T
C
= - 55 °C
4
6
8
10
V
DS
- Drain-to-Source
V
oltage (
V
)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
25
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
Transfer Characteristics
0.25
g fs - Transconductance (S)
20
0.20
T
C
= 25 °C
15
0.15
V
GS
= 4.5
V
0.10
V
GS
= 10
V
0.05
10
T
C
= 125 °C
5
0
0
5
10
15
20
25
0
0
6
12
18
24
30
V
GS
- Gate-to-Source
Voltage
(V)
I
D
- Drain Current (A)
Transconductance
2000
10
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source
Voltage
(V)
I
D
= 19 A
8
1500
C - Capacitance (pF)
C
iss
V
DS
= 30
V
6
1000
4
500
C
oss
C
rss
2
0
0
10
20
30
40
50
60
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3/9
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