SQ4840EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 14 A
1.7
I
S
-
Source
Current (A)
V
GS
= 10 V
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
100
1.4
V
GS
= 4.5 V
1.1
0.8
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
175
0.001
0.0
0.2
T
J
- Junction Temperature (°C)
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.10
0.4
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.08
0
0.06
V
GS(th)
Variance (V)
- 0.4
I
D
= 5 mA
0.04
T
J
= 125 °C
0.02
- 0.8
I
D
= 250 μA
0
0
1
T
J
= 25 °C
2
3
4
5
6
7
8
V
GS
- Gate-to-Source
Voltage
(V)
9
10
- 1.2
- 50
- 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
54
I
D
= 1 mA
52
Threshold Voltage
V
DS
- Drain-to-Source
Voltage
(V)
50
48
46
44
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
4 / 10
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