SQ4410EY
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
1.8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 10 A
V
DS
= 15 V
1.6
1.4
V
GS
= 4.5 V
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
30
Q
g
- Total
Gate
Charge (nC)
35
40
0.6
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
On-Resistance vs. Junction Temperature
100
0.10
10
I
S
-
Source
Current (A)
0.08
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.06
0.1
T
J
= 25
°C
0.04
T
J
= 150
°C
0.02
0.01
T
J
= 25
°C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
40
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
0.1
V
GS(th)
Variance (V)
38
- 0.3
I
D
= 5 mA
I
D
= 250 μA
- 0.7
36
34
- 1.1
32
- 1.5
- 50 - 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
30
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4 / 10
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