SQ4330EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 8.7 A
1.7
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 8.7 A
V
DS
= 15 V
6
1.4
V
GS
= 4.5 V
1.1
4
2
0.8
0
0
10
20
30
Q
g
- Total
Gate
Charge (nC)
40
0.5
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
100
On-Resistance vs. Junction Temperature
0.6
10
I
S
-
Source
Current (A)
V
GS(th)
Variance (V)
0.3
T
J
= 150
°C
0.0
1
- 0.3
I
D
= 5 mA
0.1
T
J
= 25
°C
- 0.6
I
D
= 250 μA
0.01
- 0.9
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 1.2
- 50 - 25
0
V
SD
-
Source-to-Drain
Voltage (V)
25
50
75 100
T
J
- Temperature (°C)
125
150
175
Source Drain Diode Forward Voltage
0.15
40
On-Resistance vs. Gate-to-Source Voltage
V
DS
- Drain-to-Source Voltage (V)
0.12
R
DS(on)
- On-Resistance (Ω)
38
I
D
= 1 mA
0.09
36
0.06
34
0.03
T
J
= 25
°C
0.00
0
T
J
= 150
°C
32
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
30
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4 / 10
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