SQ4184EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
I
D
= 5 A
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 5 A
1.7
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
8
6
V
DS
= 20 V
1.4
V
GS
= 4.5 V
1.1
4
2
0.8
0
0
20
40
60
80
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.025
On-Resistance vs. Junction Temperature
10
R
DS(on)
- On-Resistance (Ω)
0.020
I
S
-
Source
Current (A)
T
J
= 150
°C
1
0.015
0.1
T
J
= 25
°C
0.01
0.010
T
J
= 150
°C
0.005
T
J
= 25
°C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.6
50
On-Resistance vs. Gate-to-Source Voltage
0.3
V
GS(th)
Variance (V)
V
DS
- Drain-to-Source Voltage (V)
48
I
D
= 1 mA
0.0
46
- 0.3
I
D
= 5 mA
- 0.6
44
- 0.9
I
D
= 250 μA
42
- 1.2
- 50 - 25
0
25
50
75
100
125
150
175
40
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4 / 10
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
