SQ3418EEV
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
0.6
60
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
175
0.3
57
V
GS(th)
Variance (V)
0.0
54
- 0.3
I
D
= 5 mA
51
- 0.6
I
D
= 250 μA
- 0.9
48
- 1.2
- 50 - 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
45
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
Drain-Source Breakdown vs. Junction Temperature
100
I
DM
Limited
I
D
- Drain Current (A)
10 Limited by R
DS(on)
*
100 μs
I
D
Limited
1
1 ms
10 ms
100 ms
1
s,
10
s,
DC
BVDSS Limited
0.1
T
C
= 25
°C
Single
Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
5 / 11
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