SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
I
D
= 5 A
8
R
DS(on)
- On-Resistance
(Normalized)
1.7
2.0
I
D
= 5 A
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
6
V
DS
= 15 V
4
1.4
V
GS
= 4.5 V
1.1
2
0.8
0
0
4
8
12
16
20
0.5
- 50 - 25
0
25
50
75
100
125
150
175
Q
g
- Total
Gate
Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.15
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
R
DS(on)
- On-Resistance (Ω)
0.12
0.09
0.1
0.06
0.01
0.03
T
J
= 25
°C
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
T
J
= 150
°C
0.001
0.0
8
10
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
40
On-Resistance vs. Gate-to-Source Voltage
V
DS
- Drain-to-Source Voltage (V)
0.2
V
GS(th)
Variance (V)
38
I
D
= 1 mA
- 0.1
36
- 0.4
I
D
= 250 μA
- 0.7
I
D
= 5 mA
34
32
- 1.0
- 50 - 25
0
25
50
75
100
125
150
175
30
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
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