SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
2.0
1.7
1.4
1.1
0.8
0.5
ID = 5 A
ID = 5 A
VGS = 10 V
8
6
VGS = 4.5 V
VDS = 15 V
4
2
0
0
4
8
12
16
20
- 50 - 25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.15
0.12
0.09
0.06
0.03
0.00
TJ = 150 °C
1
TJ = 25 °C
0.1
TJ = 150 °C
0.01
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
40
38
36
34
32
30
ID = 1 mA
0.2
- 0.1
- 0.4
- 0.7
- 1.0
ID = 5 mA
ID = 250 μA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
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