SQ2328ES
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.5
I
D
= 1.5 A
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 1.5 A
V
DS
= 50 V
2.1
V
GS
= 10 V
6
1.7
4
1.3
2
0.9
0
0
1
2
3
4
5
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
On-Resistance vs. Junction Temperature
1.0
10
T
J
= 150
°C
1
T
J
= 25
°C
0.1
0.8
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
0.6
T
J
= 150
°C
0.4
0.01
0.2
T
J
= 25
°C
0.001
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
V
SD
-
Source-to-Drain
Voltage (V)
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
0.5
135
On-Resistance vs. Gate-to-Source Voltage
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
0.2
128
V
GS(th)
Variance (V)
- 0.1
121
- 0.4
I
D
= 5 mA
114
- 0.7
I
D
= 250 μA
- 1.0
107
- 1.3
- 50 - 25
0
25
50
75
100
125
150
175
100
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4 / 10
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