SQ1470EH
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.5
100
0.2
I
S
-
Source
Current (A)
V
GS(th)
Variance (V)
10
T
J
= 150
°C
1
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250 μA
0.1
T
J
= 25
°C
- 0.7
0.01
- 1.0
- 50 - 25
0
25
50
75
100
125
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
Threshold Voltage
0.24
R
DS(on)
- On-Resistance (Normalized)
2.0
Source Drain Diode Forward Voltage
I
D
= 3.8 A
1.7
V
GS
= 4.5 V
1.4
V
GS
= 2.5 V
1.1
R
DS(on)
- On-Resistance (Ω)
0.18
0.12
T
J
= 150
°C
0.06
T
J
= 25
°C
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
0.8
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
40
I
D
= 1 mA
10
I
D
- Drain Current (A)
100
On-Resistance vs. Junction Temperature
I
DM
Limited
V
DS
- Drain-to-Source Voltage (V)
38
100 μs
Limited by R
DS(on)
*
1
I
D
Limited
0.1
1 ms
10 ms
100 ms
1s, 10
s,
DC
BVDSS Limited
36
34
32
T
C
= 25
°C
Single
Pulse
30
- 50 - 25
0
25
50
75
100
125
150
175
0.01
0.01
T
J
- Junction Temperature (°C)
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
4 / 11
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