SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.005
10
-2
10
-3
0.004
10
-4
I
GSS
-
Gate
Current (A)
I
GSS
-
Gate
Current (A)
0.003
T
J
= 25 °C
0.002
10
-5
10
-6
T
J
= 25 °C
10
-7
10
-8
10
-9
0.000
0
6
12
18
24
30
V
GS
-
Gate-Source
Voltage (V)
10
-10
0
6
12
18
24
V
GS
-
Gate-Source
Voltage (V)
30
T
J
= 150 °C
0.001
Gate Current vs. Gate-Source Voltage
1.4
V
GS
= 10 V thru 4 V
1.2
0.8
I
D
- Drain Current (A)
1.0
Gate Current vs. Gate-Source Voltage
I
D
- Drain Current (A)
1.0
0.8
0.6
0.4
0.2
0.0
0.0
V
GS
= 3 V
0.6
T
C
= 25
°C
0.4
0.2
T
C
= 125
°C
0.0
0.4
0.8
1.2
1.6
2.0
0
1
V
DS
- Drain-to-Source Voltage (V)
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
6
T
C
= - 55
°C
Output Characteristics
5
0.50
Transfer Characteristics
g
fs
- Transconductance (S)
T
C
= - 55
°C
3
T
C
= 25
°C
2
T
C
= 125
°C
1
R
DS(on)
- On-Resistance (Ω)
4
0.40
0.30
0.20
V
GS
= 4.5 V
0.10
V
GS
= 10 V
0
0
0.2
0.4
0.6
0.8
1
I
D
- Drain Current (A)
0.00
0
0.2
0.4
0.6
I
D
- Drain Current (A)
0.8
1
Transconductance
On-Resistance vs. Drain Current
3 / 12
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