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MC8810 参数 Datasheet PDF下载

MC8810图片预览
型号: MC8810
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道逻辑电平MOSFET高性能沟道技术 [Dual N-Channel Logical Level MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 5 页 / 360 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AO8 8 10/ MC8 8 10
Typical Electrical Characteristics (N-Channel)
30
V
GS
= 10.0V
25
I
D
, DRAIN CURRENT (A)
20
4.5V
30
3.0V
25
V
DS
= 5V
T
A
= -55
o
C
125
o
C
2.5V
I
D
, DRAIN CURRENT (A)
3.5V
20
25
o
C
15
15
10
2.0V
10
5
5
0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
3.5
Output Characteristics
2.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
900
Transfer Characteristics
2.2
CAPACITANCE (pF)
f = 1MHz
V
GS
= 0 V
600
C
iss
2
1.8
1.6
2.5V
1.4
1.2
1
0.8
0
5
3.0V
3.5V
4.0V
4.5V
10.0V
300
C
oss
C
rss
0
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
0
4
8
12
16
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
On-Resistance vs. Drain Current
5
V
GS
, GATE-SOURCE VOLTAGE (V)
15V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
Capacitance
I
D
= 4.5A
4
V
DS
= 5V
I
D
= 4.5A
V
GS
= 10V
1.4
10V
3
1.2
2
1
1
0.8
0
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
6
7
8
0.6
-50
-25
0
25
50
75
100
o
T
J
, JUNCTION TEMPERATURE ( C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
3
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