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MC6604 参数 Datasheet PDF下载

MC6604图片预览
型号: MC6604
PDF下载: 下载PDF文件 查看货源
内容描述: 氮磷通道20 -V ( DS ) MOSFET高性能沟道技术 [N & P-Channel 20-V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 7 页 / 465 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AO6 6 04 / MC6 6 04
Typical Electrical Characteristics (P-Channel)
6
5
I
D
- Drain Current (A)
4
3
2
1
0
0
0.5
1
1.5
2
2.5
-2.0V
-1.8V
V
GS
=- 4.5V
I
D
- Drain Current (A)
-2.5V
4
5
T
A
= -55
o
C
125
o
C
25
o
C
3
2
1
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Soruce Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.75
r
DS(ON)
- Normalized On-Resistance
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0
1
2
3
I
D
- Drain Current (A)
4
5
6
-4.5V
-2.5V
C - Capacitance (pF)
600
500
400
300
200
C
OSS
100
C
RSS
0
0
5
10
V
DS
- Drain-to- Source Voltage (V)
15
20
C
ISS
On-Resistance vs. Drain Current
Capacitance
-10
r
DS(ON)
, - On-Resistance (Normalized)
1.6
V
GS
= -4.5V
1.4
-8
Vgs Voltage ( V )
-6
1.2
-4
1
-2
0.8
0.6
-50
-25
0
25
50
75
o
0
0
3
6
9
12
15
100
125
150
Qg, Charge (nC)
T
J
- Junction Temperature ( C)
Gate Charge
On-Resistance vs. Junction Temperature
5
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