Frees c ale
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
AO4443 / MC4443
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
35 @ V
GS
= -10V
-40
45 @ V
GS
= -4.5V
I
D
(A)
-9.0
-7.2
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
Drain-Source Voltage
V
DS
-40
V
±20
Gate-Source Voltage
V
GS
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
-9.0
-7.3
±50
-2.1
3.1
2.6
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70
o
C
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady State
R
θJA
Maximum
50
92
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
