Analog Power
Freescale
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r
DS(on)
provides higher efficiency and
extends battery life
•
Low thermal impedance copper leadframe
SOT-23 saves board space
•
Fast switching speed
•
High performance trench technology
AM2322N
AO3406/ MC3406
PRODUCT SUMMARY
V
DS
(V)
r
DS (on )
(Ω)
0.085 @ V
GS
= 10V
30
0.125 @ V
GS
= 4.5V
I
D
(A)
2.5
1.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
±
20
V
GS
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
2.5
2
10
0.46
1.25
0.8
-55 to 150
o
A
A
W
C
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parame te r
t <= 5 sec
a
Maximum Junction-to-Ambient
Steady-State
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol
R
THJA
Maximum
150
200
Units
o
C/W
1
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