IRL3803
10000
8000
6000
C
oss
V
G S
, G a te-to-S ou rc e V o ltag e (V )
V
GS
C
iss
C
C
iss C
rs s
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
15
I
D
= 7 1A
V
D S
= 2 4V
V
D S
= 1 5V
12
C , Capacitance (pF)
9
4000
6
C
rss
2000
3
0
1
10
100
A
0
0
40
80
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
120
160
A
200
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R everse Drain C urrent (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
10µ s
T
J
= 17 5°C
100
I
D
, D rain Current (A )
100
100µ s
T
J
= 25 °C
1m s
10
0.4
0.8
1.2
1.6
2.0
2.4
V
G S
= 0V
2.8
A
10
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
10m s
100
3.2
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4/8
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