IRL3803S/L
10000
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
=C
C
iss C
rss
= C
gd
+ C
oss
ds
gd
15
I
D
= 71A
V
DS
= 24V
V
DS
= 15V
12
C, Capacitance (pF)
6000
C
oss
9
4000
6
C
rss
2000
3
0
1
10
100
A
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
A
200
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100
T
J
= 175°C
I
D
, Drain Current (A)
100
100µs
T
J
= 25°C
1ms
10
0.4
0.8
1.2
1.6
2.0
2.4
V
GS
= 0V
2.8
A
10
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
A
100
3.2
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 10
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