IRL2203NS/L
6000
V
GS
, Gate-to-Source Voltage (V)
5000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 60A
V
DS
= 24V
V
DS
= 15V
12
C, Capacitance (pF)
4000
Ciss
3000
9
6
2000
Coss
1000
3
Crss
0
1
10
100
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
100
1000
T
J
= 175
°
C
10
100
100µsec
1msec
1
T
J
= 25
°
C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
VDS , Drain-toSource Voltage (V)
10msec
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
1
V
SD
,Source-to-Drain Voltage (V)
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 10
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