IRL2203NS/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min
30
–––
–––
–––
1.0
73
–––
–––
–––
–––
–––
–––
–––
0.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ
–––
0.029
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
160
23
66
4.5
7.5
3290
1270
Max Units
–––
–––
7.0
10
3.0
–––
25
250
100
-100
60
14
33
3.0
–––
–––
–––
–––
–––
Nh
–––
–––
–––
–––
pF
mJ
Ω
V
DD
= 15V
I
D
= 60A
R
G
= 1.8Ω
nC
V
S
µA
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 60A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
f
= 48A
f
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 60A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 60A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
GS
= 4.5V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
f
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
I
AS
= 60A, L = 0.16mH
d
170
––– 1320
g
290
h
i
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min
–––
–––
–––
–––
–––
Typ
–––
–––
–––
56
110
Max Units
116
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 60A, V
GS
= 0V
T
J
= 25°C, I
F
= 60A
di/dt = 100A/µs
Ã
400
1.2
84
170
V
ns
nC
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
R
θ
is measured at T
J
approximately 90°C
Starting T
J
= 25°C, L = 0.16mH R
G
= 25Ω,
I
AS
= 60A, V
GS
=10V (See Figure 12)
I
SD
≤
60A, di/dt
≤
110A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400µs; duty cycle
≤
2%.
2 / 10
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