IRFZ44N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min. Typ. Max. Units
Conditions
55
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.058 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 17.5 mΩ V
GS
= 10V, I
D
= 25A
2.0
––– 4.0
V
V
DS
= V
GS
, I
D
= 250µA
19
––– –––
S
V
DS
= 25V, I
D
= 25A
––– ––– 25
V
DS
= 55V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
––– ––– 63
I
D
= 25A
––– ––– 14
nC V
DS
= 44V
––– ––– 23
V
GS
= 10V, See Fig. 6 and 13
–––
12 –––
V
DD
= 28V
–––
60 –––
I
D
= 25A
ns
–––
44 –––
R
G
= 12Ω
–––
45 –––
V
GS
= 10V, See Fig. 10
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5 –––
and center of die contact
––– 1470 –––
V
GS
= 0V
––– 360 –––
V
DS
= 25V
–––
88 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 530
150 mJ I
AS
= 25A, L = 0.47mH
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
49
––– –––
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
––– 63
95
ns
T
J
= 25°C, I
F
= 25A
––– 170 260
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
≤
25A, di/dt
≤
230A/µs, V
DD
≤
V
(BR)DSS
,
Starting T
J
= 25°C, L = 0.48mH
R
G
= 25Ω, I
AS
= 25A. (See Figure 12)
T
J
≤
175°C
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
2/8
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
