IRFR/U5410
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
DV
(BR)DSS
/DT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-100
-2.0
3.2
Typ.
-0.12
15
58
45
46
4.5
7.5
760
260
170
Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1.0mA
0.205
W
V
GS
= -10V, I
D
= -7.8A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
S
V
DS
= -50V, I
D
= -7.8A
-25
V
DS
= -100V, V
GS
= 0V
µA
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
58
I
D
= -8.4A
8.3
nC
V
DS
= -80V
32
V
GS
= -10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= -8.4A
ns
R
G
= 9.1W
R
D
=6.2W, See Fig. 10
D
Between lead,
6mm (0.25in.)
nH
G
from package
and center of die contact
S
V
GS
= 0V
pF
V
DS
= -25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
-13
showing the
A
G
integral reverse
-52
p-n junction diode.
S
-1.6
V
T
J
= 25°C, I
S
= -7.8A, V
GS
= 0V
130 190
ns
T
J
= 25°C, I
F
= -8.4A
650 970
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 6.4mH
R
G
= 25W, I
AS
= -7.8A. (See Figure 12)
I
SD
£
-7.8A, di/dt
£
200A/µs, V
DD
£
V
(BR)DSS
,
T
J
£
150°C
Pulse width
£
300µs; duty cycle
£
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
Uses IRF9530N data and test conditions.
2 / 10
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