IRFR/U3711
100000
10
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
=
30A
V
DS
= 16V
V
DS
= 10V
8
C, Capacitance(pF)
10000
Ciss
Coss
1000
6
4
Crss
2
100
1
10
100
VDS , Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
ID, Drain-to-Source Current (A)
1000
10
100
100µsec
1msec
T
J
= 25
°
C
1
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
VDS , Drain-toSource Voltage (V)
100
10msec
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 10
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
