IRFR/U3410
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
2.0
–––
–––
–––
–––
Typ.
–––
0.11
34
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
39
mΩ V
GS
= 10V, I
D
= 18A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
33
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
37
10
11
12
27
40
13
1690
220
26
1640
130
250
Max. Units
Conditions
–––
S
V
DS
= 25V, I
D
= 18A
56
I
D
= 18A
–––
nC
V
DS
= 50V
–––
V
GS
= 10V,
–––
V
DD
= 50V
–––
I
D
= 18A
ns
–––
R
G
= 9.1Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 80V
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
140
18
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 31
showing the
A
G
integral reverse
––– ––– 125
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
––– 84 –––
ns
T
J
= 25°C, I
F
= 18A
––– 260 –––
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2 / 10
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