IRFR2307Z
IRFU2307Z
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 32A
V
DS
= 25V, I
D
= 32A
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
nA
V
GS
= 20V
V
GS
= -20V
I
D
= 32A
nC
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 32A
ns
R
G
= 10
Ω
V
GS
= 10V
nH
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
–––
7.5
2190
280
150
1070
190
400
–––
–––
–––
–––
–––
–––
–––
pF
V
mΩ
V
S
µA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Min. Typ. Max. Units
75
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.072
12.8
–––
–––
–––
–––
–––
–––
50
14
19
16
65
44
29
4.5
–––
–––
16
4.0
–––
25
250
200
-200
75
–––
–––
–––
–––
–––
–––
–––
V/°C Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 100µA
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
31
31
42
A
210
1.3
47
47
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
T
J
= 25°C, I
F
= 32A, V
DD
= 38V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 / 11
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