IRFR/U3710Z
EAS , Single Pulse Avalanche Energy (mJ)
15V
700
600
500
400
300
200
100
0
25
50
75
100
125
150
175
VDS
L
DRIVER
ID
TOP
3.4A
4.8A
BOTTOM 33A
RG
20V
V
GS
D.U.T
IAS
tp
+
V
- DD
A
0.01
Ω
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
Starting T J , Junction Temperature (°C)
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
10 V
Q
GS
Q
GD
VGS(th) Gate threshold Voltage (V)
4.0
V
G
3.0
Charge
Fig 13a.
Basic Gate Charge Waveform
ID = 250µA
2.0
L
0
DUT
1K
VCC
1.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage vs. Temperature
6 / 11
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