IRFR/U3303
1400
V
GS
, Gate-to-Source Voltage (V)
1200
V
GS
C
iss
C
rss
C
oss
= 0V,
f = 1MHz
= C
gs
+ C
gd ,
C
ds
SHORTED
= C
gd
= C
ds
+ C
gd
20
I
D
= 18A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
1000
800
Ciss
Coss
12
600
8
400
200
Crss
4
0
1
10
100
0
0
5
10
15
FOR TEST CIRCUIT
SEE FIGURE 13
20
25
30
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
100
10us
10
100us
10
1ms
1
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
1
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 10
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