IRFR/U24N15D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.18
82
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
95
mΩ V
GS
= 10V, I
D
= 14A
5.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 150V, V
GS
= 0V
µA
250
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
8.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
30
7.4
17
11
53
19
15
890
220
46
1460
95
200
Max. Units
Conditions
–––
S
V
DS
= 25V, I
D
= 14A
45
I
D
= 14A
11
nC
V
DS
= 120V
26
V
GS
= 10V,
–––
V
DD
= 75V
–––
I
D
= 14A
ns
–––
R
G
= 6.8Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 120V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
170
14
14
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
24
––– –––
showing the
A
G
integral reverse
96
––– –––
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
––– 110 –––
ns
T
J
= 25°C, I
F
= 14A
––– 450 –––
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2 / 10
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