IRFR2307Z
IRFU2307Z
ID= 32A
VDS = 60V
VDS= 38V
VDS= 15V
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
16
3000
C, Capacitance(pF)
Ciss
2000
12
8
1000
4
Coss
Crss
0
1
10
100
0
0
20
40
60
80
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100.00
TJ = 175°C
10.00
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
1.00
TJ = 25°C
0.10
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V
1.4
1.6
DC
10
100
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 11
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