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IRFR024N 参数 Datasheet PDF下载

IRFR024N图片预览
型号: IRFR024N
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET®功率MOSFET [HEXFET® Power MOSFET]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 10 页 / 364 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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IRFR/U024N
700
600
V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
is s
C
rs s
C
oss
=
=
=
=
0V ,
f = 1M H z
C
gs
+ C
gd
, C
ds
S H O R TE D
C
gd
C
ds
+ C
gd
20
I
D
= 10 A
V
D S
= 44V
V
D S
= 28V
16
C , C apacitanc e (pF )
500
C
iss
400
C
oss
12
300
8
200
C
rs s
4
100
0
1
10
100
A
0
0
4
8
FO R TE S T C IR C U IT
S E E FIG U R E 13
12
16
20
A
V
D S
, D rain-to-S ource V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
S D
, R everse D rain C urrent (A )
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R
D S (on)
T
J
= 175°C
T
J
= 25°C
10
I
D
, D rain C urrent (A )
100
10µ s
10
100µ s
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
G S
= 0V
1.8
A
1
1
T
C
= 25°C
T
J
= 175°C
S ingle P ulse
10
1m s
10m s
100
A
2.0
V
S D
, S ource-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 10
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