IRF9530N
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
C
iss
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
20
I
D
= -8.4A
V
DS
=-80V
V
DS
=-50V
V
DS
=-20V
C , Capacitance (pF)
15
1200
C
iss
10
800
C
oss
C
rss
5
400
0
1
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
-V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse D rain Current (A )
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 15 0°C
10
-I
D
, Drain Current (A)
I
100
10us
T
J
= 25 °C
100us
10
1ms
1
0.1
0.4
0.6
0.8
1.0
1.2
V
G S
= 0V
1.4
A
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
10ms
100
1000
1.6
-V
S D
, S ourc e-to-D rain V oltage (V )
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4/8
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