IRF5305S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
–––
–––
-2.0
8.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.034
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
66
39
63
7.5
1200
520
250
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.06
Ω
V
GS
= -10V, I
D
= -16A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -25V, I
D
= -16A
-25
V
DS
= -55V, V
GS
= 0V
µA
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
63
I
D
= -16A
13
nC V
DS
= -44V
29
V
GS
= -10V, See Fig. 6 and 13
–––
V
DD
= -28V
–––
I
D
= -16A
ns
–––
R
G
= 6.8Ω
–––
R
D
= 1.6Ω, See Fig. 10
Between lead,
nH
–––
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -31
showing the
A
G
integral reverse
––– ––– -110
p-n junction diode.
S
––– ––– -1.3
V
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
––– 71 110
ns
T
J
= 25°C, I
F
= -16A
––– 170 250
nC
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRF5305 data and test conditions
V
DD
= -25V, Starting T
J
= 25°C, L = 2.1mH
R
G
= 25Ω, I
AS
= -16A. (See Figure 12)
T
J
≤
175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤
-16A, di/dt
≤
-280A/µs, V
DD
≤
V
(BR)DSS
,
2 / 10
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