IRF3205Z/ZS/ZL
6000
5000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID= 66A
VDS= 44V
VDS= 28V
VDS= 11V
16
C, Capacitance (pF)
4000
Ciss
12
3000
8
2000
4
1000
Coss
Crss
0
1
10
100
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100μsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
10.0
T J = 25°C
1.0
1
0.1
0.2
0.6
1.0
1.4
VGS = 0V
1.8
2.2
0.1
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 12
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