IRF2804
IRF2804S/L
12000
10000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + C , Cds SHORTED
gs
gd
Crss = C
gd
Coss = Cds + C
gd
20
ID= 75A
VDS= 32V
VDS= 20V
VDS= 8.0V
16
C, Capacitance (pF)
8000
12
Ciss
6000
8
4000
4
2000
Coss
Crss
0
1
10
100
0
0
40
80
120
160
200
240
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T J = 175°C
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100.0
1000
10.0
100
100µsec
1.0
T J = 25°C
0.1
0.2
0.6
1.0
1.4
VGS = 0V
1.8
2.2
10
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
1msec
10msec
100
1000
1
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 12
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