AOD1N60/AOU1N60/AOI1N60
600V,1.3A N-Channel MOSFET
General Description
The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
700V@150℃
1.3A
< 9Ω
g
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Avalanche Current
C
C
H
C
Maximum
600
±30
1.3
0.8
4
1
15
30
5
45
0.36
-50 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,G
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
Symbol
R
θJA
R
θCS
R
θJC
Typical
45
-
2.3
Maximum
55
0.5
2.8
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
