AOTF6N90
900V,6A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=720V
I
D
=6A
Capacitance (pF)
10000
C
iss
1000
C
oss
100
12
V
GS
(Volts)
9
6
10
3
C
rss
1
0
5
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
15
40
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
0
8
100
10µs
Current rating I
D
(A)
6
I
D
(Amps)
10
R
DS(ON)
limited
100µs
1ms
DC
10ms
0.1s
4
1
2
0.1
T
J(Max)
=150°C
T
C
=25°C
1s
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 9: Current De-rating (Note B)
0.01
1
10
100
1000
10000
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF6N90 (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
0.001
0.00001
T
on
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF6N90 (Note F)
4/5
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