AOTF42S60
600V 42A
α
MOS
TM
Power Transistor
General Description
TM
The AOTF42S60 has been fabricated using the advanced
αMOS
high voltage process that is designed to deliver
high levels of performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
700V
166A
0.099Ω
40nC
9.2µJ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
AOTF42S60
Symbol
Drain-Source Voltage
V
DS
600
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF42S60L
Units
V
V
V
GS
T
C
=25°
C
C
T
C
=100°
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
AOTF42S60
65
2.5
50
0.4
42*
27*
±30
42*
27*
166
11
234
1345
37.9
0.3
100
20
-55 to 150
300
AOTF42S60L
65
3.3
A
A
mJ
mJ
W
W/
o
C
V/ns
°
C
°
C
Units
°
C/W
°
C/W
Repetitive avalanche energy
Single pulsed avalanche energy
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Symbol
A,D
R
θJA
Maximum Junction-to-Ambient
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
