AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=400V
I
D
=22A
Capacitance (pF)
1000
C
oss
10000
C
iss
12
V
GS
(Volts)
9
6
100
C
rss
3
0
0
40
60
80
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
100
10
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
100
R
DS(ON)
limited
10
1ms
I
D
(Amps)
I
D
(Amps)
DC
1
10ms
10µs
100µs
100
R
DS(ON)
limited
10
10µs
100µs
1ms
10ms
0.1s
1s
DC
1
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT22N50 (Note F)
25
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
1000
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF22N50 (Note F)
Current rating I
D
(A)
20
15
10
5
0
0
25
50
75
100
125
150
T
CASE
(°C)
°
Figure 11: Current De-rating (Note B)
4/6
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