AOTF18N65
650V,18A N-Channel MOSFET
General Description
The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply
designs.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
750V@150℃
18A
< 0.39Ω
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF18N65
650
±30
18*
12*
80
6.3
595
1190
5
50
0.4
-55 to 150
300
AOTF18N65
65
2.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
Units
°C/W
°C/W
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
Repetitive avalanche energy
Single pulsed avalanche energy
E
AS
Peak diode recovery dv/dt
dv/dt
T
C
=25°C
P
D
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
T
J
, T
STG
Maximum lead temperature for soldering
T
L
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Maximum Junction-to-Ambient
A,D
R
θJA
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
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